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Silicon carbide substrate (powder ) sintering furnace
Silicon carbide substrate or powder sintering furnace
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details

Use

The furnace mainly used for sintering silicon carbide substrate or powder.

Main configuration:

1.Horizontal structure with built-in water cooling jacket. .

2. Graphite rod as heating element, electric resistance heating.

3 . Heating element along inner shell of furnace helps improving temperature uniformity.

4. Sintering done under the vacuum conduces to enhancing the thermo-stability 

    and shock resistance of the sintered product.   

5. Automatic control mode of PLC plus touching screen.

Main technical parameters:

No.

Model

Max. temperature

Working zone

Vacuum

Atmosphere

（WXHXD）mm

1

ZS-90-20

2400℃

400X400X1200

1Pa

Arg. Or N2

2

ZS-300-20

2400℃

500X500X1500

1Pa

Arg. Or N2

3

ZS-400-20

2400℃

600X600X1800

1Pa

Arg. Or N2

 Furnace can be customized on your request. 

 


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